a p9926geo-hf advanced power dual n-channel enhancement electronics corp. mode power mosfet low on-resistance bv dss 20v capable of 2.5v gate drive r ds(on) 28m low drive current i d 4.6a surface mount package rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 125 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 1 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.008 drain current 3 , v gs @ 4.5v 3.7 pulsed drain current 1 20 gate-source voltage + 12 drain current 3 , v gs @ 4.5v 4.6 parameter rating drain-source voltage 20 halogen-free product 1 201501273 d2 s2 s2 g2 d1 s1 s1 g1 tssop-8 s1 g1 d1 s2 g2 d2 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =4a - - 28 m v gs =2.5v, i d =2a - - 40 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - - v g fs forward transconductance v ds =10v, i d =4.6a - 9.7 - s i dss drain-source leakage current v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =20v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 10 v, v ds =0v - - + 10 ua q g total gate charge i d =4.6a - 12.5 - nc q gs gate-source charge v ds =20v - 1 - nc q gd gate-drain ("miller") charge v gs =5v - 6.5 - nc t d(on) turn-on delay time v ds =10v - 5 - ns t r rise time i d =1a - 9 - ns t d(off) turn-off delay time r g =3.3 - 26.2 - ns t f fall time v gs =5v - 6.8 - ns c iss input capacitance v gs =0v - 355 - pf c oss output capacitance v ds =20v - 190 - pf c rss reverse transfer capacitance f=1.0mhz - 85 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v,v s =1.2v - - 0.83 a v sd forward on voltage 2 t j =25 ,i s =1.25a,v gs =0v - - 1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 208 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap9926geo-hf
ap9926geo-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 20 25 30 35 40 2345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d = 4a t a =25 o c 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =2.0v 4.5v 4.0v 3.5v 3.0v 2.5v 0 6 12 18 24 0.0 0.5 1.0 1.5 2.0 2.5 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =2.0v 4.5v 4.0v 3.5v 3.0v 2.5v 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 4a v g =4.5v 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.2 0.6 1.0 1.4 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
ap9926geo-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + ta r thja =208 o c/w t t 0.02 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0 2 4 6 8 10 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =10v v ds =15v v ds =20v i d =4.6a 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge
ap9926geo-hf marking information 5 9926geo ywwsss part numbe r date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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